Publikations Einzelansicht

Titel: Preparation of polycrystalline Ti-Al-O films by magnetron sputtering ion plating constitution, structure an morphology
 

Autor(en):
 
A. von Richthofen, R. Cremer, R. Domnick und D. Neuschütz
 
Journal: Fresenius J Anal Chem
Jahr: 1997
Band: 358
Seite(n): 308-311


Zusammenfassung:
Ti-Al-O layers were deposited on Si-<100> wafers at 500 °C by means of reactive magnetron sputtering ion plating (R-MSIP). An Al-target was sputtered in rf-mode and a Ti-target in dc-mode simultaneously by an oxygen/argon plasma. The influence of the Al- and Ti-sputter powers on composition, structure, and morphology of the Ti-Al-O layers and the binding states of the components were investigated. The analysis with EPMA, XPS, AES and TEM yielded the following results: Ti-Al-O coatings with different Ti, Al, and O contents in the range of TiO2 to Al2O3 were grown. TEM structure analysis revealed: the pure TiO2 film consisted of the tetragonal phases rutile and anatase; the two structures were found in the titanium-rich Ti-Al-O film, too, but with significant smaller lattice constants. The aluminium-rich Ti-Al-O film displayed the same cubic structure of γ-Al2O3 as determined for the pure Al2O3 film, but the lattice constant is significant lower. Evaluation of the TEM pattern of the film with a Ti/Al ratio of 0.8 indicates a hexagonal structure with lattice constants similar to those of κ’-Al2O3. All films are nanocrystalline and not textured.

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Publikations Einzelansicht

Titel: Preparation of polycrystalline Ti-Al-O films by magnetron sputtering ion plating constitution, structure an morphology
 

Autor(en):
 
A. von Richthofen, R. Cremer, R. Domnick und D. Neuschütz
 
Journal: Fresenius J Anal Chem
Jahr: 1997
Band: 358
Seite(n): 308-311


Zusammenfassung:
Ti-Al-O layers were deposited on Si-<100> wafers at 500 °C by means of reactive magnetron sputtering ion plating (R-MSIP). An Al-target was sputtered in rf-mode and a Ti-target in dc-mode simultaneously by an oxygen/argon plasma. The influence of the Al- and Ti-sputter powers on composition, structure, and morphology of the Ti-Al-O layers and the binding states of the components were investigated. The analysis with EPMA, XPS, AES and TEM yielded the following results: Ti-Al-O coatings with different Ti, Al, and O contents in the range of TiO2 to Al2O3 were grown. TEM structure analysis revealed: the pure TiO2 film consisted of the tetragonal phases rutile and anatase; the two structures were found in the titanium-rich Ti-Al-O film, too, but with significant smaller lattice constants. The aluminium-rich Ti-Al-O film displayed the same cubic structure of γ-Al2O3 as determined for the pure Al2O3 film, but the lattice constant is significant lower. Evaluation of the TEM pattern of the film with a Ti/Al ratio of 0.8 indicates a hexagonal structure with lattice constants similar to those of κ’-Al2O3. All films are nanocrystalline and not textured.

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